ISC016N08NM8SCATMA1 vs ISZ028N03LF2SATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma ISC016N08NM8SCATMA1 tarafından Infineon ve ISZ028N03LF2SATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ AktifInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | ISC016N08NM8SCATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 8 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| Paket | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | StrongIRFET 2 (Trench MOSFET) |
| İşletim Sıcaklığı Aralığı | -55C to +175C | -55C to +175C (junction, typical) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 2.35 V |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | [DATA_NEEDED: Qg] |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | — | Yes (single-pulse) |