ISC016N08NM8SCATMA1 vs ISZ028N03LF2SATMA1 比較
詳細な並列比較: ISC016N08NM8SCATMA1 メーカー: Infineon および ISZ028N03LF2SATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ 生産中仕様比較
| パラメータ | ISC016N08NM8SCATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.72 | $0.49 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 8 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| パッケージ | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | StrongIRFET 2 (Trench MOSFET) |
| 動作温度範囲 | -55C to +175C | -55C to +175C (junction, typical) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 2.35 V |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | [DATA_NEEDED: Qg] |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | — | Yes (single-pulse) |