ISC016N08NM8SCATMA1 vs ISZ028N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC016N08NM8SCATMA1 disebabkan oleh Infineon dan ISZ028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC016N08NM8SCATMA1 - 80V OptiMOS 8 N-Channel MOSFET | Infineon
ISC016N08NM8SCATMA1 ✓ AktifInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC016N08NM8SCATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 8 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current at TA=25°C (ID) | 29 A | — |
| Continuous Drain Current at TC=25°C (ID) | 269 A | — |
| Power Dissipation at TC=25°C (PD) | 263 W | — |
| Kemasan | PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) | PG-TSDSON-8 FL (FL = flat lead) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 8 (shield-gate trench) | StrongIRFET 2 (Trench MOSFET) |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +175C (junction, typical) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 2.35 V |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg @ VGS=10V] | [DATA_NEEDED: Qg] |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Drain Tab Connection | Top + bottom exposed (dual-side cooling) | — |
| Continuous Drain Current (ID) at Tc | — | 128 A |
| Continuous Drain Current (ID) at Ta | — | 22 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max | — | 2.8 mΩ |
| Power Dissipation (Tc) | — | 83 W |
| Power Dissipation (Ta) | — | 3 W |
| Gate Drive Voltage (recommended) | — | 10 V (logic level at 4.5 V) |
| Avalanche Energy Rated | — | Yes (single-pulse) |