ISC017N04NM5ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of ISC017N04NM5ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC017N04NM5ATMA1
ISC017N04NM5ATMA1 - 40V 1.7mΞ© N-Ch MOSFET | Infineon
ISC017N04NM5ATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC017N04NM5ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25C | 31 A | β |
| Continuous Drain Current (ID) at TC=25C | 193 A | β |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm | β |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V | β |
| Gate Charge Qg at VGS=10V | 67 nC | β |
| Input Capacitance Ciss at VDS=20V | 4800 pF | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| Operating Temperature Range | β | -55C to +175C |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |