ISC017N04NM5ATMA1 vs IPC100N04S5L1R5ATMA1 比較

詳細並排比較 ISC017N04NM5ATMA1 由 Infineon 與 IPC100N04S5L1R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC017N04NM5ATMA1 ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon

ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon

ISC017N04NM5ATMA1 ✓ 啟用中
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 啟用中

規格比較

參數 ISC017N04NM5ATMA1 IPC100N04S5L1R5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 31 A —
Continuous Drain Current (ID) at TC=25C 193 A —
On-Resistance RDS(on) at VGS=10V, ID=50A 1.7 mOhm —
Gate Threshold Voltage VGS(th) typ. 3.4 V —
Gate Charge Qg at VGS=10V 67 nC —
Input Capacitance Ciss at VDS=20V 4800 pF —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
工作接面溫度 -55C to +175C —
封裝 PG-TDSON-8 FL (5x6 mm) PG-TDSON-8-34 (SS08 leadless)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant (Green Product)
MSL 等級 1 (per JEDEC J-STD-020) MSL1 (260C peak reflow)
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
工作溫度範圍 — -55C to +175C
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

資料表與資源

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