ISC017N04NM5ATMA1 vs IPC100N04S5L1R5ATMA1 对比

详细并排对比 ISC017N04NM5ATMA1 出自 Infineon 和 IPC100N04S5L1R5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ISC017N04NM5ATMA1 ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon

ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon

ISC017N04NM5ATMA1 ✓ 量产中
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 量产中

规格对比

参数 ISC017N04NM5ATMA1 IPC100N04S5L1R5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 31 A —
Continuous Drain Current (ID) at TC=25C 193 A —
On-Resistance RDS(on) at VGS=10V, ID=50A 1.7 mOhm —
Gate Threshold Voltage VGS(th) typ. 3.4 V —
Gate Charge Qg at VGS=10V 67 nC —
Input Capacitance Ciss at VDS=20V 4800 pF —
Power Dissipation at TA=25C 3 W —
Power Dissipation at TC=25C 115 W —
工作结温 -55C to +175C —
封装 PG-TDSON-8 FL (5x6 mm) PG-TDSON-8-34 (SS08 leadless)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (Green Product)
MSL 等级 1 (per JEDEC J-STD-020) MSL1 (260C peak reflow)
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
工作温度范围 — -55C to +175C
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

数据手册与资源

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