ISC040N10NM7ATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC040N10NM7ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
ISC040N10NM7ATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC040N10NM7ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 130 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at Ta=25Β°C | 3 W | β |
| Power Dissipation (PD) at Tc=25Β°C | 150 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| RDS(on) @ VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Package | PG-TDSON-8-34 (SSO8) | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max) | -55C to +175C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | β | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | β | Yes (single-pulse) |