ISC040N10NM7ATMA1 vs ISC037N12NM6ATMA1 对比
详细并排对比 ISC040N10NM7ATMA1 出自 Infineon 和 ISC037N12NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
ISC040N10NM7ATMA1 ✓ 量产中
规格对比
| 参数 | ISC040N10NM7ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.92 | $3.62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta=25°C | 3 W | — |
| Power Dissipation (PD) at Tc=25°C | 150 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) @ VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| 封装 | PG-TDSON-8-34 (SSO8) | PG-TDSON-8 FL (SuperSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55°C to +175°C (TJ max) | -55C to +175C (junction) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |