ISC040N10NM7ATMA1 vs ISC037N12NM6ATMA1 比較
詳細な並列比較: ISC040N10NM7ATMA1 メーカー: Infineon および ISC037N12NM6ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
ISC040N10NM7ATMA1 - 100V 130A OptiMOS 7 N-Channel MOSFET | Infineon
ISC040N10NM7ATMA1 ✓ 生産中
仕様比較
| パラメータ | ISC040N10NM7ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $3.62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 130 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at Ta=25°C | 3 W | — |
| Power Dissipation (PD) at Tc=25°C | 150 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) @ VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| パッケージ | PG-TDSON-8-34 (SSO8) | PG-TDSON-8 FL (SuperSO8) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55°C to +175°C (TJ max) | -55C to +175C (junction) |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |