ISC078N12NM6ATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of ISC078N12NM6ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC078N12NM6ATMA1 - 120V 85A N-Ch MOSFET 7.8mΞ© SuperSO8 | Infineon
ISC078N12NM6ATMA1 β Active
Specification Comparison
| Parameter | ISC078N12NM6ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| Technology | N-Channel Trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID) at Tc | 85 A | β |
| Continuous Drain Current (ID) at Ta | 13.2 A | β |
| On-Resistance RDS(on) typ at VGS=10V | 7.8 mΞ© | β |
| Power Dissipation at Tc | 125 W | β |
| Power Dissipation at Ta | 3 W | β |
| Package | SuperSO8 (TDSON-8) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Lead-Free | Yes | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| MSL (Moisture Sensitivity Level) | β | 1 |