ISC078N12NM6ATMA1 - 120V 85A N-Ch MOSFET 7.8mΩ SuperSO8 | Infineon
MPN: ISC078N12NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.67 | $16.70 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
| 5,000 | $0.78 | $3,900.00 |
ISC078N12NM6ATMA1 Overview
What is an OptiMOS 6 power MOSFET? An OptiMOS 6 power MOSFET is Infineon's sixth-generation trench-gate N-channel power-MOSFET family engineered for switched-mode power conversion; it sits inside the broader power-management semiconductor hierarchy of discrete MOSFET -> trench MOSFET -> power MOSFET. The OptiMOS 6 generation targets higher power density, lower switching losses, and improved figure-of-merit (FOM = RDS(on) × Qg) versus earlier generations, enabling smaller magnetics and higher switching frequencies in SMPS, DC-DC, and motor-control designs.
Key features of the ISC078N12NM6ATMA1 include 120 V VDS rating suitable for 48 V telecom buses, e-mobility auxiliary rails, and USB-PD/automotive 12-24 V systems; 85 A continuous drain current enabling high-current phases without paralleling; 7.8 mΩ typical RDS(on) at VGS = 10 V minimising conduction losses; and SuperSO8 package with exposed thermal pad providing low thermal resistance (~1 C/W junction-to-case pad typical) for high-power-density layouts. The part supports surface-mount reflow assembly and is qualified for industrial-grade operating temperatures.
Architecturally, the ISC078N12NM6ATMA1 uses Infineon's latest-generation N-channel trench-gate technology that reduces both on-resistance per unit area and gate charge, delivering a low figure-of-merit critical for hard-switched and soft-switched topologies. The lower Qg (gate charge) directly translates into reduced driving losses at high switching frequencies, allowing designers to push SMPS frequencies above 500 kHz without exceeding driver losses.
Typical applications include 48 V telecom DC-DC converters, e-bike and light electric-vehicle motor drives, solar micro-inverters and string inverters, industrial switched-mode power supplies, and high-current synchronous rectification in server and telecom buck/boost stages. The low RDS(on) also makes it attractive for battery protection and hot-swap controllers in 48 V battery stacks.
Designers should note that to realise the 85 A rating, the PCB copper area must provide adequate heat spreading to keep the junction below the maximum rating. The exposed SuperSO8 thermal pad must be soldered to a sufficient copper pour with thermal vias to a heat-spreading inner plane.
This page synthesises distributor pricing, drop-in pin-compatible alternatives in the same SuperSO8 footprint, and practical PCB layout notes that supplement the manufacturer datasheet.
Drop-in alternatives for ISC078N12NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC078N12NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Product Family, MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC037N12NM6ATMA1
✅ Drop-In✓ In Stock
$3.62 / Unit
View Datasheet →ISC151N08NM6ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →ISC028N03LF2SATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →ISC078N12NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Tc | 85 A |
| Continuous Drain Current (ID) at Ta | 13.2 A |
| On-Resistance RDS(on) typ at VGS=10V | 7.8 mΩ |
| Power Dissipation at Tc | 125 W |
| Power Dissipation at Ta | 3 W |
| Package | SuperSO8 (TDSON-8) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) |
| Pin Count | 8 |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Lead-Free | Yes |
ISC078N12NM6ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Source — Source connection (low-side) |
| Pin 3 | Source — Source connection (low-side, parallel with pin 2) |
| Pin 4 | Gate — Gate return/sense (Kelvin source) |
| Pin 5 | Drain — Drain connection |
| Pin 6 | Drain — Drain connection (parallel with pin 5) |
| Pin 7 | Drain — Drain connection (parallel with pin 5) |
| Pin 8 | Drain (Thermal Pad) — Drain and exposed thermal pad - must be soldered to PCB copper for thermal dissipation |
ISC078N12NM6 Safe Operating Area
Typical Applications
ISC078N12NM6ATMA1 is suitable for 6 applications: 48 V Telecom DC-DC Converters, Solar Micro-Inverter Power Stage, E-Bike / Light EV Motor Drives, Industrial Switched-Mode Power Supplies (SMPS), Server / Telecom Hot-Swap & ORing, Battery Management & Protection FETs.
48 V Telecom DC-DC Converters
The ISC078N12NM6ATMA1 fits 48 V telecom isolated DC-DC converters as a low-side synchronous rectifier in half-bridge or full-bridge primary stages. The 120 V VDS rating provides 2x headroom over the nominal 48 V input, comfortably absorbing leakage-inductance spikes during 100-200 kHz hard-switching transitions. The 7.8 mΩ RDS(on) keeps rectification losses below 1.5% at 40 A secondary-side current, improving overall efficiency versus 10-12 mΩ competitor parts. The SuperSO8 exposed pad with thermal vias to an inner copper plane dissipates the 5-8 W typical synchronous-rectifier loss. Pair with a digital isolator and a current-mode controller for a complete 48 V telecom brick design.
Recommended
Solar Micro-Inverter Power Stage
In solar micro-inverter and string-inverter topologies, the ISC078N12NM6ATMA1 functions as the main switching element or synchronous rectifier on the 40-80 V PV string side. The 120 V VDS rating tolerates the MPPT operating envelope with margin for 100 V open-circuit transients at cold conditions. The 7.8 mΩ RDS(on) and 85 A continuous ID support sub-200 W micro-inverter ratings with a single half-bridge, eliminating the need to parallel multiple MOSFETs. OptiMOS 6 generation low gate charge keeps driver losses manageable at 50-100 kHz switching frequencies typical of micro-inverter designs. The SuperSO8 footprint enables compact module-level power-density targets.
Recommended
E-Bike / Light EV Motor Drives
The ISC078N12NM6ATMA1 is well matched to 36 V / 48 V battery e-bike and light-electric-vehicle motor-drive applications, where it forms the three-phase inverter leg switches feeding BLDC or PMSM motors. The 120 V rating provides margin over the 54.6 V peak of a fully-charged 13S Li-ion pack, including regenerative-braking transients. The 85 A continuous ID supports 250-500 W continuous motor power with adequate PCB copper spreading. The SuperSO8 package's exposed thermal pad enables mounting directly above a heatsink-fin copper pour. Designers can also use this part in 48 V mild-hybrid DC-DC converter stages.
Recommended
Industrial Switched-Mode Power Supplies (SMPS)
In industrial 24-72 V input SMPS designs, the ISC078N12NM6ATMA1 operates as the primary-side switch in a hard-switched flyback or forward converter topology, or as the secondary-side synchronous rectifier. The 120 V VDS rating fits 72 V industrial bus inputs with 30% derating margin. The 7.8 mΩ RDS(on) reduces conduction loss in 200-500 W supplies, while the OptiMOS 6 figure-of-merit enables 200-300 kHz switching frequencies for smaller magnetics. The 125 W power dissipation at Tc supports continuous industrial operation. PCB layout with thermal vias to inner copper planes is critical to fully realise the 85 A current rating.
Recommended
Server / Telecom Hot-Swap & ORing
The ISC078N12NM6ATMA1 fits 48 V server and telecom hot-swap and ORing applications as the main pass-MOSFET or reverse-polarity-protection switch. The 120 V rating covers 48 V nominal rails with substantial transient headroom. At 7.8 mΩ RDS(on), the conduction loss at 30 A continuous current is approximately 7 W - manageable on a SuperSO8 footprint with adequate thermal vias. For low-frequency hot-swap applications where switching losses are negligible, this RDS(on) advantage translates directly into reduced heatsinking requirements. The part also supports active current-sharing designs in paralleled converter modules.
Recommended
Battery Management & Protection FETs
The ISC078N12NM6ATMA1 is suitable as the charge/discharge protection FET or pack-side switch in 36 V / 48 V battery management systems (BMS). The 120 V VDS rating tolerates back-EMF and load-dump transients in 13-16S Li-ion packs. The 7.8 mΩ RDS(on) and 85 A continuous ID support 3-5 kW pack power levels with a single FET per rail, avoiding parallel-FET complexity. The SuperSO8 package allows compact BMS PCB layouts, and the exposed thermal pad spreads heat during high-peak discharge events. Designers should add a TVS clamp and gate-source resistor network for robust switch-off behaviour under inductive fault conditions.
Recommended
Recommended Products Summary
Engineering reference data for ISC078N12NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC037N12NM6ATMA1 | ISC151N08NM6ATMA1 | ISC011N04NM7VATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|
| Package | SuperSO8 (TDSON-8) | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same | SuperSO8 (TDSON-8) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 120 V | 120 V | 80 V | 40 V | 60 V |
| RDS(on) typ at VGS=10V | 7.8 mΩ | 3.7 mΩ (-53%) | 15.1 mΩ | 1.1 mΩ | 1.5 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 |
Key Differentiators
- OptiMOS 6 generation gives best-in-class figure-of-merit at 120 V (vs ISC015N06NM5ATMA1 (OptiMOS 5))
- 120 V VDS rating covers 48 V telecom bus with comfortable margin (vs ISC151N08NM6ATMA1 (80 V VDS))
- Lower RDS(on) than typical 120 V competitor parts (vs Generic 120 V SuperSO8 competitor (10-12 mΩ class))
Design Notes
Estimated: at 50 A continuous drain current and 7.8 mΩ RDS(on), conduction loss is approximately 50² × 0.0078 ≈ 19.5 W. The SuperSO8 package thermal resistance from junction to case is approximately 1.0 C/W (verify in datasheet). Without a heatsink or sufficient PCB copper spreading (recommended at least 4 cm² of 2 oz copper with thermal vias to an inner plane), the junction can exceed 175 C under continuous operation. For full 85 A capability, a heatsink-mounted PCB is required.
Solder the exposed thermal pad (pin 8 / Drain) to a copper pour on the top layer that is sized to spread heat to thermal vias (typical 0.3 mm diameter, 1 mm pitch, 6-12 vias). Connect the thermal vias to an inner-layer copper flood and ideally to the bottom layer for additional heat spreading. Keep the gate-drive loop compact - place the gate resistor and gate-source pull-down resistor within 5 mm of the gate pin to minimise parasitic inductance.
Route the high-current source and drain traces on outer layers with multiple parallel copper pours. Keep the switching node (drain) area small to minimise radiated EMI. Place a 100 nF ceramic bypass capacitor close to the gate-driver VCC pin. Use a Kelvin source connection (pin 4) for the gate-drive return to decouple the gate-drive loop from the high-current source path - this dramatically reduces turn-on/off ringing and switching loss.
Do not exceed 120 V VDS - even transient inductive spikes during MOSFET turn-off can puncture the part if the snubber/TVS clamp is undersized. Always add a gate-source resistor (10-100 kΩ) to prevent unwanted turn-on from dv/dt coupling. For paralleled FET operation, source degeneration resistors are required for current balancing. Verify SOA curves from the datasheet against your specific switching profile before committing to a design.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified (industrial grade). Industrial operating temperature range. Halogen-free status not explicitly stated in the provided distributor data - verify with manufacturer datasheet if required.
