ISC0802NLSATMA1 vs ISC0805NLSATMA1 Comparison

Detailed side-by-side comparison of ISC0802NLSATMA1 by Infineon and ISC0805NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC0802NLSATMA1

ISC0802NLSATMA1 - 100V 150A OptiMOS 5 N-MOSFET | Infineon

ISC0802NLSATMA1 βœ“ Active
Infineon
ISC0805NLSATMA1

ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon

ISC0805NLSATMA1 βœ“ Active

Specification Comparison

Parameter ISC0802NLSATMA1 ISC0805NLSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.80 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Part Number ISC0802NLSATMA1 β€”
FET Type N-Channel β€”
Technology OptiMOS 5 (Power MOSFET) β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 150 A β€”
Continuous Drain Current (ID) at Ta 22 A β€”
RDS(on) max at VGS=10V 3.6 mOhm β€”
Power Dissipation (Pd) at Ta 2.5 W β€”
Power Dissipation (Pd) at Tc 125 W β€”
Operating Temperature Range -55 C to +175 C -55 Β°C to +150 Β°C
Package PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-46 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Family β€” OptiMOSβ„’ 5
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at TA=25Β°C β€” 13 A
Continuous Drain Current (ID) at TC=25Β°C β€” 71 A
Power Dissipation (PD) at TA β€” 2.5 W
Power Dissipation (PD) at TC β€” 74 W
On-Resistance RDS(on) max at VGS=10V β€” 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V]
On-Resistance RDS(on) max at VGS=4.5V β€” 10.7 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 2.3 V
Gate Charge Qg typ at VGS=4.5V β€” 16 nC
Input Capacitance Ciss β€” 2.2 nF
Reverse Transfer Capacitance Crss β€” 23 pF
Output Capacitance Coss β€” 360 pF

Datasheets & Resources

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