ISC0802NLSATMA1 vs ISC0805NLSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC0802NLSATMA1 disebabkan oleh Infineon dan ISC0805NLSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC0802NLSATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 150 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C | -55 °C to +150 °C |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-46 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS™ 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 13 A |
| Continuous Drain Current (ID) at TC=25°C | — | 71 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 74 W |
| On-Resistance RDS(on) max at VGS=10V | — | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | — | 16 nC |
| Input Capacitance Ciss | — | 2.2 nF |
| Reverse Transfer Capacitance Crss | — | 23 pF |
| Output Capacitance Coss | — | 360 pF |