ISC0805NLSATMA1 vs ISC009N06LM5ATMA1 Comparison
Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC0805NLSATMA1
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
ISC0805NLSATMA1 β Active
Specification Comparison
| Parameter | ISC0805NLSATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TA=25Β°C | 13 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 71 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 74 W | β |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | 0.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | β |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | β |
| Input Capacitance Ciss | 2.2 nF | β |
| Reverse Transfer Capacitance Crss | 23 pF | β |
| Output Capacitance Coss | 360 pF | β |
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +175 C |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 5 |
| Technology | β | OptiMOS 5 60V N-channel trench MOSFET |
| Continuous Drain Current (ID) at Ta | β | 41 A |
| Continuous Drain Current (ID) at Tc | β | 348 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical] |
| Power Dissipation at Ta (PD) | β | 3 W |
| Power Dissipation at Tc (PD) | β | 214 W |
| MSL Level | β | [DATA_NEEDED: MSL rating] |