ISC0805NLSATMA1 vs ISC009N06LM5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC0805NLSATMA1 dari Infineon dan ISC009N06LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC0805NLSATMA1 ISC009N06LM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at TA=25°C 13 A —
Continuous Drain Current (ID) at TC=25°C 71 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 74 W —
On-Resistance RDS(on) max at VGS=10V 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] 0.9 mOhm
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.3 V —
Gate Charge Qg typ at VGS=4.5V 16 nC —
Input Capacitance Ciss 2.2 nF —
Reverse Transfer Capacitance Crss 23 pF —
Output Capacitance Coss 360 pF —
Paket PG-TDSON-8-46 (SuperSO8 5x6) PG-TSON-8-3 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C -55 C to +175 C
Status RoHS Compliant Compliant
Series — OptiMOS 5
Technology — OptiMOS 5 60V N-channel trench MOSFET
Continuous Drain Current (ID) at Ta — 41 A
Continuous Drain Current (ID) at Tc — 348 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: VGS threshold typical]
Power Dissipation at Ta (PD) — 3 W
Power Dissipation at Tc (PD) — 214 W
Level MSL — [DATA_NEEDED: MSL rating]

Spek dan Sumber

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