ISC0805NLSATMA1 vs ISC009N06LM5ATMA1 比較
詳細な並列比較: ISC0805NLSATMA1 メーカー: Infineon および ISC009N06LM5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC0805NLSATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.82 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | — |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | 0.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| パッケージ | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 °C to +150 °C | -55 C to +175 C |
| RoHS ステータス | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| Technology | — | OptiMOS 5 60V N-channel trench MOSFET |
| Continuous Drain Current (ID) at Ta | — | 41 A |
| Continuous Drain Current (ID) at Tc | — | 348 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |