ISC080N10NM6ATMA1 vs ISC046N13NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC080N10NM6ATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveInfineon
ISC046N13NM6ATMA1
ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon
ISC046N13NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC080N10NM6ATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 6 100V | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 100 V | β |
| Continuous Drain Current (ID) at Ta | 13 A | β |
| Continuous Drain Current (ID) at Tc | 75 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | 8.05 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V at 36 Β΅A | β |
| Package | PG-TDSON-8 FL (TDSON EP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ max, per datasheet) | -55 C to +175 C |
| MSL Level | 1 (per JEDEC J-STD-020, per datasheet) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial grade (per Infineon OptiMOS 6 100V family) | β |
| Part Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 135 V |
| Continuous Drain Current (ID) at TA | β | 17 A |
| Continuous Drain Current (ID) at TC | β | 142 A |
| Power Dissipation (PD) at TA | β | 3 W |
| Power Dissipation (PD) at TC | β | 211 W |
| Package / Case | β | PG-TDSON-8 |
| Technology | β | OptiMOS 6 trench MOSFET |
| Gate Drive (recommended) | β | 10 V (typical) |
| Packaging | β | Tape & Reel |