ISC088N08NM6ATMA1 vs ISC037N12NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC088N08NM6ATMA1 sa pamamagitan ng Infineon at ISC037N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC088N08NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | — |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Ta=25 C | 3 W | — |
| Power Dissipation (PD) at Tc=25 C | 71 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TDSON-8 FL | PG-TDSON-8 FL (SuperSO8) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (junction) |
| Avalanche Energy Rated | — | Yes (single-pulse) |