ISC088N08NM6ATMA1 - 80V 8.8mOhm N-Channel MOSFET | Infineon
MPN: ISC088N08NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.45 | $14.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
ISC088N08NM6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses a gate electric field to conduct current between the drain and source terminals. Within the discrete-semiconductor hierarchy, MOSFETs sit beneath transistors and above thyristors, and within power electronics they enable synchronous rectification, buck/boost conversion, hot-swap control, and motor drive. OptiMOS 6 represents Infineon's sixth-generation 60-100 V platform, offering improved figure-of-merit (FOM = RDS(on) x Qg) versus prior generations, which directly translates to lower conduction and switching losses.
Key features of the ISC088N08NM6 include: 80 V VDS rating for 48 V telecom bus and battery packs, 8.8 mOhm max RDS(on) at VGS=10 V for minimal conduction loss, low gate charge Qg for fast switching, logic-level capable VGS(th) around 2 V for direct MCU drive, and an operating junction temperature up to 175 C. The PG-TDSON-8 FL package provides Kelvin-source connection and an exposed die-attach pad that delivers low thermal resistance, making the part suitable for high-current, high-frequency surface-mount designs.
The Infineon OptiMOS 6 process uses trench-gate cell architecture with a refined epitaxial layer, achieving superior RDS(on) per unit area and lower Qgd/Qgs ratios than planar predecessors. This reduces both I2R losses during synchronous rectification and gate-drive losses in hard-switched topologies, making the ISC088N08NM6 well suited to high-frequency buck converters operating at 300 kHz to 1 MHz.
Typical applications include 48 V telecom and server point-of-load (POL) converters, solar micro-inverters and DC optimizers, battery-management protection circuits (BMS), synchronous rectification in isolated DC-DC converters, and hot-swap / e-fuse functions in industrial and computing power distribution.
When designing with this part, ensure the PCB layout exposes the thermal pad to a sufficient copper pour (>=1 sq inch of 2 oz copper recommended) and that the gate-drive loop area is minimized to prevent ringing. The ISC088N08NM6 is pin-compatible with the broader Infineon OptiMOS 6 PG-TDSON-8 FL family, simplifying second-source qualification.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for sourcing and design validation.
Drop-in alternatives for ISC088N08NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC088N08NM6ATMA1 (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, MSL Level, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC151N08NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.78 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →ISC037N12NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3.62 / Unit
View Datasheet →BSC019N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.78 / Unit
View Datasheet →IAUCN08S7L033ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.86 / Unit
View Datasheet →BSC050N04LSGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.41 / Unit
View Datasheet →ISC088N08NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A |
| Continuous Drain Current (ID) at Tc=25 C | 59 A |
| Gate Threshold Voltage (VGS(th)) | 3.5 V |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm |
| Power Dissipation (PD) at Ta=25 C | 3 W |
| Power Dissipation (PD) at Tc=25 C | 71 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TDSON-8 FL |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (per distributor listings) |
| Technology | Trench-gate OptiMOS 6 |
ISC088N08NM6ATMA1 Pin Configuration
| Pin 1 | G — Gate - drive input |
| Pin 2 | S (Kelvin) — Source (Kelvin) - gate return |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | D — Drain (bonded to exposed pad) |
| Pin 6 | D — Drain (bonded to exposed pad) |
| Pin 7 | D — Drain (bonded to exposed pad) |
| Pin 8 | D — Drain (bonded to exposed pad) |
Safe Operating Area (DC, continuous)
Typical Applications
ISC088N08NM6ATMA1 is suitable for 6 applications: 48V Telecom Point-of-Load (POL) Converter, Solar Micro-Inverter and DC Optimizer, Battery Management System (BMS) Protection, Synchronous Rectification in Isolated DC-DC, Hot-Swap and E-Fuse Circuit, Brushless DC (BLDC) Motor Drive Half-Bridge.
48V Telecom Point-of-Load (POL) Converter
The ISC088N08NM6ATMA1 fits 48V telecom POL converters because its 80V VDS rating provides 1.67x safety margin over a nominal 48V bus with transient spikes to 60V. The 8.8 mOhm max RDS(on) at VGS=10 V delivers <2% conduction loss at 30A output, while the 71W Tc-rated power dissipation supports sustained full-load operation in dense server rack power units. Placed as the synchronous rectifier in a buck stage switching at 300-500 kHz, it benefits from Infineon's OptiMOS 6 low-Qg design that minimizes gate-drive losses. Compared to a planar MOSFET, the part achieves >24% lower RDS(on) per Infineon's claim, enabling higher-density 48V-to-POL designs. The PG-TDSON-8 FL exposed thermal pad allows standard 1 sq inch 2oz copper PCB land to keep Tj below 100C at full load.
Recommended
Solar Micro-Inverter and DC Optimizer
In solar micro-inverters and DC optimizers operating from 40-60V PV string voltages, the ISC088N08NM6ATMA1 provides safe 80V VDS headroom while its 8.8 mOhm RDS(on) keeps conduction losses under 1% in the high-frequency switching stage. According to Infineon's part page, the part targets >24% lower RDS(on) versus prior generation, directly translating to higher CEC-weighted inverter efficiency. The OptiMOS 6 low-Qg design enables 100 kHz+ switching frequencies that shrink magnetics in space-constrained micro-inverter modules. The PG-TDSON-8 FL exposed thermal pad simplifies thermal management on aluminum-substrate PCBs common in solar designs. Compared to IGBT alternatives at this voltage class, the MOSFET delivers faster switching and lower switching loss, improving light-load efficiency critical for residential solar yield.
Recommended
Battery Management System (BMS) Protection
In 48V battery-management system (BMS) protection circuits, the ISC088N08NM6ATMA1 serves as the high-side or low-side disconnect switch due to its 80V VDS rating that covers 60V battery packs plus inductive transient spikes. The 8.8 mOhm RDS(on) keeps continuous-carry voltage drop below 50 mV at 6A discharge, preserving battery pack capacity measurement accuracy. Per the Infineon datasheet, the operating junction temperature up to 175C enables placement near battery cells without thermal derating. The MOSFET's low gate charge supports fast turn-off (<1 microsecond) for short-circuit protection response required by UL 1973 and IEC 62619 BMS standards. The PG-TDSON-8 FL package delivers the low thermal resistance needed for sustained 12.1A continuous current in BMS disconnect applications.
Recommended
Synchronous Rectification in Isolated DC-DC
In isolated DC-DC converter secondary-side synchronous rectification, the ISC088N08NM6ATMA1 replaces Schottky diodes to achieve >2% efficiency improvement at 48V-to-12V conversion ratios. The 8.8 mOhm RDS(on) at VGS=10 V directly reduces secondary-side conduction loss versus a 100A Schottky forward drop of 0.5V (saving approximately 5W per MOSFET). According to Infineon OptiMOS 6 family documentation, the low Qrr body diode minimizes dead-time losses and reverse-recovery spikes that complicate secondary-side timing. The 80V VDS rating covers secondary-side ringing transients in 48V-input full-bridge or forward converters with adequate margin. The PG-TDSON-8 FL Kelvin-source pin minimizes gate-drive loop inductance, enabling clean switching edges at 200-500 kHz.
Recommended
Hot-Swap and E-Fuse Circuit
In 48V server hot-swap and electronic-fuse (e-fuse) circuits, the ISC088N08NM6ATMA1 functions as the series disconnect switch, with its 80V VDS rating tolerating backplane inrush transients and the 8.8 mOhm RDS(on) limiting steady-state voltage drop to <100 mV at 12A. Per the Infineon datasheet, the part's linear-mode SOA capability allows it to conduct full inrush current while the output capacitance charges, provided the hot-swap controller limits peak power and duration. The Kelvin-source pin enables accurate current sensing for the hot-swap controller, while the exposed thermal pad dissipates the SOA-limited inrush energy. Compared to a mechanical relay or fuse, this MOSFET-based e-fuse provides resettable overcurrent protection, faster response, and I2C telemetry for predictive maintenance.
Recommended
Brushless DC (BLDC) Motor Drive Half-Bridge
In 48V brushless DC (BLDC) motor drive half-bridge stages, the ISC088N08NM6ATMA1 serves as both high-side and low-side switch, with its 80V VDS rating covering 48V bus plus regenerative braking spikes to 70V. The 8.8 mOhm RDS(on) keeps per-MOSFET conduction loss under 1W at 10A continuous phase current, supporting motor efficiencies above 95%. The OptiMOS 6 low Qgd/Qgs ratio minimizes dead-time and shoot-through risk in trapezoidal commutation at 20-50 kHz PWM frequencies. According to Infineon's part page, the part targets solar and battery management, both of which integrate BLDC drives for cooling fans or trackers. The PG-TDSON-8 FL exposed thermal pad enables compact 3-phase inverter designs where PCB real estate is at a premium.
Recommended
Recommended Products Summary
Engineering reference data for ISC088N08NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC151N08NM6ATMA1 | IQE036N08NM6CGATMA1 | ISC037N12NM6ATMA1 | BSC019N08NS5ATMA1 | IAUCN08S7L033ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| VDS Rating | 80 V | 80 V | 80 V | 120 V | 80 V | 80 V | 40 V |
| RDS(on) max at VGS=10V | 8.8 mOhm | 15 mOhm | 3.6 mOhm | 3.7 mOhm | 1.9 mOhm | 3.3 mOhm | 5.0 mOhm |
| Technology | OptiMOS 6 trench-gate silicon | OptiMOS 6 trench-gate silicon | OptiMOS 6 trench-gate silicon | OptiMOS 6 trench-gate silicon | OptiMOS 5 trench-gate silicon | CoolGaN-like trench-gate silicon | OptiMOS 3 trench-gate silicon |
| Pin-to-pin compatibility | Reference | Yes - same package | Yes - same package | Yes - same package | Yes - same package | Yes - same package | Yes - same package |
| Primary use case | 48V telecom, solar, BMS | 48V telecom (cost-optimized) | 48V POL high-current | Higher-voltage 100V+ bus | High-current 48V secondary-side | High-efficiency 48V applications | 12V/24V battery management |
Key Differentiators
- Lower RDS(on) than prior generation (vs Prior OptiMOS 5 family at 80V)
- Lower RDS(on) than same-package alternative (vs ISC151N08NM6ATMA1)
- Higher voltage rating than same-package alternative (vs BSC050N04LSGATMA1)
Design Notes
Estimated: at VIN=48V, VOUT=12V, IOUT=12A continuous (typical server POL), power dissipation in this MOSFET as synchronous rectifier is P = I^2 x RDS(on) = 144 x 0.0088 = 1.27W. With PG-TDSON-8 FL thermal resistance (theta_JA approximately 50 C/W on 1 sq inch 2oz copper JEDEC test board), junction temperature rise above 25C ambient is approximately 64C, keeping Tj well below 175C max. For sustained 30A operation, increase copper pour to 2-3 sq inches and consider forced-air cooling. Always verify with the manufacturer's thermal derating curves in the datasheet.
Use Kelvin-source connection (pin 2) as the gate-driver return path rather than the source pins 3-4. This minimizes the source-inductance loop area shared by the gate-drive and power loops, reducing gate ringing and dv/dt-induced turn-on. Place a 10 ohm gate resistor close to the gate pin to damp the LC resonance of the gate-source capacitance with the package plus layout inductance. The exposed thermal pad must be soldered to a copper land of at least 1 sq inch of 2 oz copper to achieve rated thermal performance.
Do not exceed the VDS rating of 80V; account for inductive switching transients that can overshoot 2x the bus voltage in hard-switched topologies. Add a TVS clamp or RC snubber across the MOSFET if the application sees repetitive avalanche events. The VGS(th) of 3.5V means logic-level MCU GPIO (typically 3.3V) cannot fully enhance the MOSFET; use a gate-driver IC that delivers VGS=10V for lowest RDS(on). Verify SOA for hot-swap inrush conditions - linear-mode operation at full bus voltage can exceed the DC SOA envelope without proper current limiting.
Compliance Information
RoHS compliant per DigiKey and Newark distributor listings. Lead-free (Pb-free) reflow profile per JEDEC J-STD-020. Not AEC-Q100 qualified - this is an industrial-grade part. For automotive-grade equivalent with similar specifications, contact Infineon about the ISC088N08NM6ATMA1 automotive version.
