ISC800P06LMATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of ISC800P06LMATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC800P06LMATMA1

ISC800P06LMATMA1 - 60V P-CH MOSFET, 19.6A, TDSON-8 | Infineon

ISC800P06LMATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter ISC800P06LMATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.41
FET Type P-Channel N-Channel
Drain-Source Voltage (VDS) -60 V 40 V
Continuous Drain Current (ID) at TC 19.6 A 256 A
Power Dissipation (PD) at TC 83 W β€”
Package PG-TDSON-8 (TDSON EP, 5x6 mm) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS trench MOSFET Trench MOSFET, silicon
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] β€”
Operating Temperature Range -55 C to +175 C (junction) -55 Β°C to +175 Β°C (TJ)
Pin Count 8 β€”
Lead-Free Yes (per Infineon product page) β€”
RoHS Status Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) MSL 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (per Infineon datasheet) β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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