ISC800P06LMATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil ISC800P06LMATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC800P06LMATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -60 V | 40 V |
| Continuous Drain Current (ID) at TC | 19.6 A | 256 A |
| Power Dissipation (PD) at TC | 83 W | — |
| Paket | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | Trench MOSFET, silicon |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Rentang Suhu Kerja | -55 C to +175 C (junction) | -55 °C to +175 °C (TJ) |
| Jumlah Pin | 8 | — |
| Lead-Free | Yes (per Infineon product page) | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |