ISCH57N04NM7VSCATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISCH57N04NM7VSCATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISCH57N04NM7VSCATMA1
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISCH57N04NM7VSCATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.41 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 7 (trench) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A | β |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | β |
| Pulsed Drain Current (IDM) at Tc | 443 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 214 W | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55 C to +175 C (typical MOSFET junction range) | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | β |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |