ISCH57N04NM7VSCATMA1 vs ISC011N04NM7VATMA1 तुलना
विस्तृत दोनों ओर की तुलना ISCH57N04NM7VSCATMA1 द्वारा Infineon और ISC011N04NM7VATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | ISCH57N04NM7VSCATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 7 (trench) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| ऑपरेटिंग तापमान रेंज | -55 C to +175 C (typical MOSFET junction range) | -55 °C to +175 °C (TJ) |
| पैकेज | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-TDSON-8 (source-down) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| RoHS स्थिति | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| MSL स्तर | — | MSL 1 (per JEDEC J-STD-020) |