ISCH57N04NM7VSCATMA1 vs ISC011N04NM7VATMA1 比較

詳細並排比較 ISCH57N04NM7VSCATMA1 由 Infineon 與 ISC011N04NM7VATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ 啟用中

規格比較

參數 ISCH57N04NM7VSCATMA1 ISC011N04NM7VATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Technology OptiMOS 7 (trench) Trench MOSFET, silicon
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc value, datasheet not in verified data] —
Pulsed Drain Current (IDM) at Tc 443 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 214 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作溫度範圍 -55 C to +175 C (typical MOSFET junction range) -55 °C to +175 °C (TJ)
封裝 PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) PG-TDSON-8 (source-down)
安裝類型 Surface Mount Surface Mount
Configuration Single N-channel, source-down lead-frame —
Cooling Dual Side Cooled (top + bottom thermal interface) —
RoHS 狀態 Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)
MSL 等級 — MSL 1 (per JEDEC J-STD-020)

資料表與資源

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