ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
MPN: ISK057N04LM6ATLA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.22 | $1.22 |
| 10 | $1.1 | $11.00 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
| 3,000 | $0.52 | $1,560.00 |
Drop-in alternatives for ISK057N04LM6ATLA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →ISK057N04LM6ATLA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 |
| Transistor Type | N-Channel MOSFET |
| Technology | Trench (OptiMOS 6) |
| Drain-to-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc | 64 A |
| RDS(on) typical at VGS=10V | 5.7 mΩ |
| Power Dissipation (PD) at Ta=25C | 2.1 W |
| Power Dissipation (PD) at Tc=25C | 39.1 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Package / Case | PG-VSON-6-1 (PQFN 2x2) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Packaging | Tape & Reel (TR) |
| DigiKey Part Number | 448-ISK057N04LM6ATLA1TR-ND |
ISK057N04LM6ATLA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | D — Drain (also exposed pad on bottom) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
ISK057N04LM6ATLA1 is suitable for 7 applications: Synchronous Buck DC-DC Converter, Wireless Charging TX Coil Switching, USB Power Delivery (USB-PD) Power Path OR-ing, Battery Protection (1S-3S Li-ion), BLDC Motor Drive H-Bridge (Low-Side), Hot-Swap / In-Rush Current Limiter, Load Switch / Power Mux.
Synchronous Buck DC-DC Converter
The ISK057N04LM6ATLA1's 5.7 mΩ typical RDS(on) at VGS=10 V and 64 A continuous drain current make it ideal for the synchronous low-side FET in 12 V-to-1.x V buck converters. In a typical 4-switch buck topology, it dissipates P=I²×R = 4²×0.0057 ≈ 91 mW at 4 A load, keeping efficiency above 95 % at 500 kHz switching. The PG-VSON-6-1 2x2 mm footprint saves critical PCB area under PMIC sub-circuits, and the logic-level gate drive (full enhancement at VGS ~4.5 V) eliminates the need for a bootstrap gate driver, reducing BOM cost by 15-20 % versus standard 10 V-drive MOSFETs. Pair with a high-side BSZ0901NS (40 V, 9 mΩ) for a matched synchronous pair.
Recommended
Wireless Charging TX Coil Switching
The ISK057N04LM6ATLA1's OptiMOS 6 trench technology delivers sub-10 nC total gate charge, enabling resonant wireless charging TX coil switching above 1 MHz with minimal driver losses. In a Qi-compliant 15 W TX coil driver, the MOSFET operates in zero-voltage switching (ZVS) mode where its low Qoss and Coss reduce circulating current losses. The 64 A peak current capability handles the LC tank transient peaks (often 2-3× steady-state), while the 2x2 mm PG-VSON-6-1 footprint fits beneath the TX coil in smartphone form-factor chargers. Compared to legacy planar MOSFETs, the OptiMOS 6 platform reduces TX coil driver temperature by 10-15 °C at full 15 W output, improving user safety margins and enabling sealed enclosures without thermal vents.
Recommended
USB Power Delivery (USB-PD) Power Path OR-ing
In USB-PD applications, the ISK057N04LM6ATLA1 functions as the high-current OR-ing FET between USB-C VBUS and the system battery rail. Its 5.7 mΩ RDS(on) at 64 A means only 365 mV drop at 5 A load - well within USB-PD 3.1 EPR's 28 V/36 V/48 V tolerance window when operating on a 20 V rail. The 40 V VDS rating provides 2:1 margin above standard 20 V USB-PD voltages, ensuring robust operation during cable hot-plug transients. Logic-level gate drive allows direct N-channel back-to-back configuration from a 5 V GPIO, simplifying the OR-ing controller circuit. This topology is standard in modern laptops and docking stations where simultaneous USB-C charging from multiple sources requires seamless source-switching without diode losses.
Recommended
Battery Protection (1S-3S Li-ion)
The ISK057N04LM6ATLA1's compact PG-VSON-6-1 footprint and 64 A pulse current rating suit 1S-3S Li-ion battery protection MOSFETs in power tools, e-bikes, and portable medical devices. In a typical 3S 10 A continuous discharge protection circuit, the MOSFET pair dissipates only P=I²×2R = 100×0.0114 ≈ 1.14 W, eliminating the need for an external heatsink. The OptiMOS 6 platform's low RDS(on) at low VGS (down to 4.5 V) ensures the protection FET remains fully enhanced even at end-of-discharge battery voltages (3.0 V/cell = 9 V pack). Compared to traditional DPAK protection FETs, the 2x2 mm PQFN saves 70 % board area, enabling higher cell-count protection boards in tight enclosures.
Recommended
BLDC Motor Drive H-Bridge (Low-Side)
In a 3-phase BLDC motor drive H-bridge, the ISK057N04LM6ATLA1 serves as the low-side switch in each half-bridge, with a complementary high-side P-channel or gate-driver-driven N-channel. At 12 V motor supply and 20 A phase current, the FET dissipates P=I²×R = 20²×0.0057 ≈ 2.28 W per low-side FET - manageable with a small copper pour. The 40 V VDS provides adequate margin for the back-EMF spikes of small BLDCs (typically 1.5-2× supply). OptiMOS 6's low Qg (~10 nC) supports PWM frequencies above 50 kHz for silent motor operation, while the PG-VSON-6-1 footprint allows 6 FETs to fit on a 25 mm × 25 mm PCB, ideal for drone ESCs and compact robotics actuators.
Recommended
Hot-Swap / In-Rush Current Limiter
The ISK057N04LM6ATLA1 is well-suited as the inrush-limiting FET in 12 V hot-swap controllers for plug-in cards and server backplanes. Its 5.7 mΩ RDS(on) keeps steady-state voltage drop below 60 mV at 10 A, while the 64 A pulsed rating handles the initial capacitor-charging surge. The 40 V VDS rating provides margin against transient ringing on long cables (typically 30-35 V peaks for 12 V systems). When paired with a hot-swap controller like the LTC4217 or TPS2590, the FET's logic-level gate drive simplifies the analog control loop. The PG-VSON-6-1 footprint allows the hot-swap circuit to fit on a single SFP-module edge card, eliminating the need for larger DPAK or D2PAK FETs that compromise board density.
Recommended
Load Switch / Power Mux
The ISK057N04LM6ATLA1 serves as a high-efficiency load switch in multi-rail power-mux circuits, replacing traditional P-channel MOSFETs with lower losses. Driven by a charge-pump or gate-driver, it provides reverse-current blocking and inrush control for downstream DC-DC converters or peripheral loads. At 5 A continuous, conduction loss is only 143 mW, and the 2x2 mm PQFN footprint fits beneath any downstream regulator. This topology is common in tablet and laptop power-path ICs where system architects must select between battery, USB-C, and barrel-jack inputs without diode drops. The OptiMOS 6 platform's soft-body-diode recovery (Qrr) reduces switching transients compared to older planar MOSFETs.
Recommended
Recommended Products Summary
Engineering reference data for ISK057N04LM6ATLA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE020N04LM6CGATMA1 | BSC028N06NSTATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-VSON-6-1 (PQFN 2x2) | PG-VSON-6-1 (PQFN 2x2) | PG-TDSON-8 | PG-TO263-7 |
| Drain-to-Source Voltage (VDS) | 40 V | 40 V | 60 V | 100 V |
| Continuous Drain Current (ID) at Tc | 64 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) typical at VGS=10V | 5.7 mΩ | [DATA_NEEDED] | 2.8 mΩ | 2.1 mΩ |
| Technology Family | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (PD) at Ta=25C | 2.1 W | [DATA_NEEDED] | 2.5 W | 3.0 W |
| Operating Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +175 °C |
| Logic-Level Gate Drive | Yes (4.5 V) | Yes | Yes | Yes (OptiMOS 5) |
| Unit Price (qty 1, USD) | $1.22 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Logic-level gate drive eliminates bootstrap requirement (vs IRF520NPBF)
- Sub-6 mΩ RDS(on) in 2x2 mm footprint (vs IPI031N08N5ATMA1 (I2PAK))
- OptiMOS 6 platform provides 20-30 % lower FOM vs OptiMOS 5 (vs BSC028N06NSTATMA1 (OptiMOS 5))
- 40 V VDS with logic-level gate in PG-VSON-6-1 (vs BSP772TXUMA1 (smart high-side switch))
Design Notes
The PG-VSON-6-1 package has a junction-to-ambient thermal resistance of approximately 60 °C/W on a JEDEC 2s2p test board, dropping to 40 °C/W with 1 oz copper flood under the exposed pad. At 1 A continuous, conduction loss is only 5.7 mW; at 20 A, dissipation rises to 2.28 W and the junction will rise 137 °C above ambient on a standard PCB. Always maximize copper area beneath the exposed pad and use at least 9 thermal vias (0.3 mm drill, 1 oz plating) to an inner ground plane for sustained high-current operation above 15 A.
The exposed drain pad must be soldered to a continuous copper plane that extends to via arrays for heat spreading. Recommended land pattern is the IPC-7351 nominal-density footprint with 0.5 mm pad pitch. Place gate-drive traces on an inner layer with the gate resistor (typically 10-47 Ω) within 5 mm of the gate pin to prevent parasitic oscillation. Keep the high-di/dt source-return loop (FET source → driver ground → driver output) under 5 nH to limit voltage overshoot during switching transitions.
Do not operate the ISK057N04LM6ATLA1 above 32 V VDS in continuous hot-swap applications without proper SOA derating. The PG-VSON-6-1 package's small thermal mass cannot sustain prolonged avalanche events; limit unclamped inductive switching (UIS) to single-pulse events below the rated avalanche energy. Ensure VGS never exceeds ±20 V (absolute max) - use a gate-source Zener (5.1 V) for protection in harsh environments. Finally, verify that the controller's minimum gate-drive voltage is below 4.5 V at full load, otherwise the FET will operate in the linear region and overheat.
In high-frequency buck converter applications (≥500 kHz), the ISK057N04LM6ATLA1's gate charge (Qg ~10 nC) drives the timing budget. Use a gate driver with peak source/sink current of 2-4 A to achieve 10-90 % rise/fall times below 20 ns. Place a 4.7 Ω gate resistor in series to dampen ringing from the gate-source loop inductance; an excessively small resistor (<2 Ω) can cause parasitic turn-on from Miller coupling during the high-side turn-on transition. For optimal EMI performance, add a small ferrite bead on the gate-drive return path.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free per industry-standard MOSFET datasheet. Not AEC-Q100 qualified (industrial/consumer grade); for automotive applications, contact Infineon for Q-100 variants.
