ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISZ025N06NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.67 | $16.70 |
| 100 | $1.48 | $148.00 |
| 500 | $1.31 | $655.00 |
| 1,000 | $1.16 | $1,160.00 |
| 3,000 | $1.02 | $3,060.00 |
ISZ025N06NM6ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses an insulated gate to modulate conduction between drain and source. N-channel MOSFETs are the dominant device type in low-voltage synchronous buck converters, motor drives, and battery protection circuits because of their lower on-resistance per unit silicon area compared to P-channel counterparts. The OptiMOS 6 60 V family sits in the voltage regulator -> DC-DC converter -> power management IC hierarchy, targeting high-current point-of-load and OR-ing applications where conduction loss dominates.
Key differentiators include >37% lower RDS(on) and ~25% higher figure-of-merit (FOM, RDS(on) × Qg) versus the previous OptiMOS 5 generation, plus a 100 W power dissipation rating at Tc that enables high-current designs without paralleling devices. The 3.3 V typical gate threshold supports 5 V logic-level drive while still maintaining a safety margin against accidental turn-on. The PG-TSDSON-8-34 package exposes the drain to a top-side thermal pad, reducing PCB loop inductance and improving heat-sinking through the board.
The ISZ025N06NM6 uses Infineon's latest trench MOSFET technology with a soft-switching optimized body diode, reducing ringing in half-bridge topologies. This makes it well-suited to high-frequency telecom and server DC-DC converters where switching losses and reverse-recovery charge directly impact efficiency. The low Qg and Qgd also reduce gate-driver losses and simplify parallel-device designs.
Typical applications include 48 V telecom bus OR-ing and hot-swap controllers, synchronous buck converters in server and datacom VRMs, e-fuse and battery protection in 24 V/48 V industrial systems, motor drive H-bridges, and USB-PD power adapters above 100 W. The wide safe operating area also makes it suitable for solenoid driving and Class-D audio output stages.
When designing with this device, place the gate-driver within 5 mm of the gate pin to minimize parasitic inductance, and use a 10 Ω gate resistor to dampen the miller plateau ringing. The exposed top pad must be soldered to a continuous copper pour of at least 50 mm² for the 100 W dissipation rating to be achievable at Tc = 25 °C.
This page synthesizes distributor pricing, drop-in alternatives from the Site MPN list, and thermal/layout design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for ISZ025N06NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISZ025N06NM6ATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Product Family, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISZ072N06NM6ATMA1
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View Datasheet →ISC151N08NM6ATMA1
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View Datasheet →ISC037N12NM6ATMA1
✅ Drop-In✓ In Stock
$3.62 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →ISZ025N06NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 137 A |
| Continuous Drain Current (ID, Ta) | 22 A |
| Maximum RDS(on) at VGS=10V | 2.5 mΩ |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 100 W |
| Package | PG-TSDSON-8-34 (5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C |
| Gate Drive Voltage (VGS) | ±20 V max |
| Technology | Trench MOSFET |
| RoHS Status | Compliant |
ISZ025N06NM6ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1) |
| Pin 2 | Source — Source connection (pin 2) |
| Pin 3 | Source — Source connection (pin 3) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (pin 5) |
| Pin 6 | Source — Source connection (pin 6) |
| Pin 7 | Source — Source connection (pin 7) |
| Pin 8 | Drain — Drain connection (exposed top-side pad) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
ISZ025N06NM6ATMA1 is suitable for 6 applications: 48 V Telecom OR-ing and Hot-Swap, Server and Datacom Synchronous Buck VRM, Industrial 24 V/48 V e-Fuse and Battery Protection, Automotive 12 V/24 V Motor Drive H-Bridge, High-Wattage USB-PD Power Adapter, Class-D Audio Output Stage.
48 V Telecom OR-ing and Hot-Swap
The ISZ025N06NM6ATMA1 is ideal for 48 V telecom OR-ing and hot-swap controllers where two redundant power supplies feed a common bus. Its 60 V VDS rating provides 12 V headroom above nominal 48 V, while the 2.5 mΩ RDS(on) minimizes steady-state conduction loss at 100 A continuous OR-ing current - dissipating only 25 W versus 50 W for a 5 mΩ part. The OptiMOS 6 soft-switching body diode reduces inrush ringing during hot-swap events. Place the part in series with a hot-swap controller like the LTC4217 and use a 10 Ω gate resistor to dampen the miller plateau; the 137 A TC rating provides 2x headroom over the typical 60 A OR-ing load.
Recommended
Server and Datacom Synchronous Buck VRM
The ISZ025N06NM6ATMA1 functions as the low-side synchronous rectifier in 48 V-to-PoL buck converters for server and datacom VRMs. Its 2.5 mΩ RDS(on) and 100 W power dissipation at TC enable single-device 80 A continuous output without paralleling, while the low Qg reduces gate-driver losses at 500 kHz switching frequencies. The OptiMOS 6 generation delivers ~25% higher FOM (RDS(on) × Qg) than the previous OptiMOS 5, directly improving VRM efficiency by 0.5-1% at full load. Pair with a digital controller like the XDPE12284C0000XUMA1 and use top-side cooling through the exposed drain pad to maintain TJ below 125 °C at 100 W dissipation.
Recommended
Industrial 24 V/48 V e-Fuse and Battery Protection
The ISZ025N06NM6ATMA1 excels in industrial 24 V/48 V e-fuse and battery protection circuits where fast disconnect and low conduction loss are both critical. Its 60 V VDS covers the 48 V nominal bus plus transient spikes up to 60 V, while the 137 A TC rating supports 100 A continuous disconnect. The 2.5 mΩ RDS(on) keeps steady-state dissipation at 10 W for a 100 A load, manageable on the standard 40x40 mm PCB footprint. The low Qgd simplifies short-circuit detection by minimizing gate-charge-induced delay; pair with a battery monitor IC and use the gate pin to interrupt current within 5 µs of a fault event.
Recommended
Automotive 12 V/24 V Motor Drive H-Bridge
The ISZ025N06NM6ATMA1 operates in 12 V/24 V automotive H-bridge motor drive topologies where its 60 V VDS comfortably handles the load-dump transient up to 35 V per ISO 7637-2. The 137 A TC rating supports peak motor inrush currents above 300 A for 100 ms without exceeding the SOA, and the 2.5 mΩ RDS(on) reduces H-bridge conduction loss by 40% versus typical 4 mΩ automotive MOSFETs. Use paired N-channel ISZ025N06NM6ATMA1 devices on both high and low sides with a half-bridge gate driver like the IR2304SPBF; the OptiMOS 6 soft body diode eliminates the need for an external anti-parallel diode in most 24 V motor applications.
Recommended
High-Wattage USB-PD Power Adapter
The ISZ025N06NM6ATMA1 functions as the primary-side switch in high-wattage 100 W-240 W USB-PD adapters using 2-stage PFC + LLC topologies. Its 60 V VDS provides ample margin for the 48 V PFC bulk voltage, and the 2.5 mΩ RDS(on) at 100 kHz switching minimizes primary-side conduction loss. The 137 A TC rating supports the 4-5 A primary RMS current typical of 240 W adapters with significant design margin. Pair with a wide-bandgap GaN device on the secondary side for highest efficiency; the OptiMOS 6 generation's soft-switching optimization complements resonant LLC waveforms for EMI compliance.
Recommended
Class-D Audio Output Stage
The ISZ025N06NM6ATMA1 drives the output stage of high-power Class-D audio amplifiers where its low RDS(on) and high current rating directly improve damping factor and THD. The 2.5 mΩ RDS(on) in the output H-bridge reduces conduction loss to 1% of audio power at 4 Ω, while the 137 A peak current supports 1 kW amplifier designs. The OptiMOS 6 family's body-diode softness reduces dead-time distortion, a key parameter for audiophile-grade Class-D designs. Pair with a dedicated Class-D controller and use a 5 Ω gate resistor to control switching-edge dV/dt for EMI compliance; the exposed drain pad enables direct heatsink attachment for the high-power audio application.
Recommended
Recommended Products Summary
Engineering reference data for ISZ025N06NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ072N06NM6ATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5ATMA1 | IAUC60N04S6L030HATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-34 (5x6 mm) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) | PG-TSDSON-8-34 (same) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 120 V | 60 V | 40 V | 80 V |
| Maximum RDS(on) at VGS=10V | 2.5 mΩ | 7.2 mΩ | 1.51 mΩ | 3.7 mΩ | 1.5 mΩ | 3 mΩ | 3.6 mΩ |
| Technology Generation | OptiMOS 6 (latest) | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 (previous) | OptiMOS 6 | OptiMOS 6 |
| Gate Threshold Voltage (VGS(th), typ) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Primary Application Focus | Lowest RDS(on) conduction-loss OR-ing | Switching-frequency optimized | Higher VDS headroom | 120 V bus applications | Legacy / cost-sensitive | 24 V automotive | Soft-switching telecom |
Key Differentiators
- Lowest RDS(on) in the Infineon OptiMOS 6 60 V portfolio (vs ISZ072N06NM6ATMA1)
- Latest-generation OptiMOS 6 process technology (vs ISC015N06NM5ATMA1)
- 60 V VDS rating optimized for 48 V telecom/industrial buses (vs ISC037N12NM6ATMA1)
Design Notes
Estimated: at continuous drain current of 100 A and RDS(on) of 2.5 mΩ, steady-state conduction loss is approximately 25 W. Using the standard 40x40 mm FR4 PCB with 6 cm² copper drain pour, the thermal resistance junction-to-ambient is approximately 50 °C/W (per Infineon datasheet test conditions), resulting in a junction temperature rise of ~125 °C above ambient - exceeding the 175 °C maximum. For sustained 100 A operation, use a forced-air cooled heatsink or increase the copper pour to 20 cm² minimum to keep TJ below 125 °C.
The exposed top-side drain pad must be soldered to a continuous PCB copper pour of at least 50 mm² for the 100 W dissipation rating to be achievable at TC = 25 °C. Use multiple thermal vias (0.3 mm diameter, 1.2 mm pitch) to connect the top drain pad to internal ground planes. The gate trace should be routed as a short, straight path of <5 mm length with a 10 Ω series damping resistor placed within 2 mm of the gate pin to suppress miller-plateau ringing and parasitic oscillation.
Do not exceed ±20 V on the gate pin; transients beyond this rating will rupture the gate oxide. The body diode is rated for forward current up to half the continuous drain rating - do not use it as a primary freewheeling path in continuous conduction applications. Avoid operating in the linear region (VDS between 1 V and full VDS) for extended durations; this falls outside the SOA curve and can cause thermal runaway. Always check the datasheet Diagram 2 for TC-based current derating above 25 °C.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; for automotive applications use the IAUC60N04S6L030HATMA1 or another AEC-Q100-qualified variant.
