ISZ025N06NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of ISZ025N06NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ025N06NM6ATMA1

ISZ025N06NM6ATMA1 - 60V 137A OptiMOS 6 N-Channel MOSFET | Infineon

ISZ025N06NM6ATMA1 βœ“ Active
Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ025N06NM6ATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $0.78
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 60 V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V 80 V
Continuous Drain Current (ID, Tc=25Β°C) 137 A β€”
Continuous Drain Current (ID, Ta) 22 A β€”
Maximum RDS(on) at VGS=10V 2.5 mΞ© β€”
Gate Threshold Voltage (VGS(th), typ) 3.3 V β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 100 W β€”
Package PG-TSDSON-8-34 (5x6 mm) PG-TDSON-8 FL
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Gate Drive Voltage (VGS) Β±20 V max β€”
Technology Trench MOSFET OptiMOS 6
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (TA=25Β°C) β€” 9.2 A
Continuous Drain Current (TC=25Β°C) β€” 37 A
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 48 W
On-Resistance RDS(on) max β€” 15.1 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 3.5 V
Number of Pins β€” 8
Channel Mode β€” Enhancement
Operating Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

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