ISZ033N03LF2SATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISZ033N03LF2SATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.34 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Continuous Drain Current (ID) at TC=25C | 109 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at TA=25C | 3 W | β |
| Power Dissipation (PD) at TC=25C | 71 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: total gate charge Qg] |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TSDSON-8 FL (8-pin) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | OptiMOS trench N-channel MOSFET |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ0901NSIATMA1 |
| Series | β | OptiMOS 25V |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET range) |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |