ISZ033N03LF2SATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil ISZ033N03LF2SATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISZ033N03LF2SATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at TA=25C 20 A —
Continuous Drain Current (ID) at TC=25C 109 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TA=25C 3 W —
Power Dissipation (PD) at TC=25C 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 2.35 V max @ 30 uA [DATA_NEEDED: gate threshold voltage]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] [DATA_NEEDED: total gate charge Qg]
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TSDSON-8 FL (8-pin) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 OptiMOS trench N-channel MOSFET
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Rentang Suhu Kerja — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon