ISZ033N03LF2SATMA1 vs ISC015N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and ISC015N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ033N03LF2SATMA1 | ISC015N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | 43 A |
| Continuous Drain Current (ID) at TC=25C | 109 A | 214 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package | PG-TSDSON-8 FL (8-pin) | PG-TDSON-8-62 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™ 2 (<= 40 V trench) |
| Channel Type | — | N-Channel |
| On-Resistance RDS(on) max at VGS=10V | — | 1.5 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2.35 V |
| Power Dissipation at TA=25C | — | 3 W |
| Power Dissipation at TC=25C | — | 125 W |
| Operating Temperature Range | — | -55C to +175C |
| Lead-Free | — | Yes |