ISZ033N03LF2SATMA1 vs ISC015N06NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of ISZ033N03LF2SATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 β ActiveInfineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | ISZ033N03LF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $2.21 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | β |
| Continuous Drain Current (ID) at TC=25C | 109 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at TA=25C | 3 W | β |
| Power Dissipation (PD) at TC=25C | 71 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 3 V |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | 90 nC |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | PG-TSDSON-8 FL (8-pin) | PG-TDSON-8 FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | OptiMOS 5 Linear FET 2 (N-Channel) |
| RoHS Status | Compliant | β |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Pulsed Drain Current (IDM) at Tc | β | 275 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 217 W |
| On-Resistance RDS(on) max at VGS=10V | β | 1.55 mΞ© |
| On-Resistance RDS(on) at VGS=10V (typ) | β | 1.3 mΞ© |
| Gate-Source Voltage Rating | β | Β±20 V |
| Reverse Recovery Charge (Qrr) | β | 1.3 nC |
| Input Capacitance (Ciss) | β | 6.9 nF |
| Output Capacitance (Coss) | β | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | β | 55 pF |
| RoHS | β | Compliant |