ISZ072N06NM6ATMA1 vs BSC014NE2LSIATMA1 Comparison

Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ072N06NM6ATMA1

ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon

ISZ072N06NM6ATMA1 βœ“ Active
Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active

Specification Comparison

Parameter ISZ072N06NM6ATMA1 BSC014NE2LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.48
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 60V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID, Tc=25Β°C) 57 A β€”
Continuous Drain Current (ID, Ta) 12.7 A 33 A
RDS(on) max @ VGS=10V 7.2 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 3.3 V (typ) β€”
Power Dissipation (Tc=25Β°C) 50 W β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Package PG-TSDSON-8-34 (TSDSON-8 FL) PG-TDSON-8-7 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C ( Tj max 175C ) β€”
Technology OptiMOS 6 trench MOSFET N-Channel MOSFET (OptiMOS 25V)
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID, Tc) β€” [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) β€” 100 A
On-State Resistance RDS(on) β€” 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Tc) β€” 74 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
Lead-Free β€” Yes

Datasheets & Resources

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