ISZ072N06NM6ATMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ072N06NM6ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | 33 A |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Power Dissipation (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | — |
| Technology | OptiMOS 6 trench MOSFET | N-Channel MOSFET (OptiMOS 25V) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID, Tc) | — | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| On-State Resistance RDS(on) | — | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Tc) | — | 74 W |
| Operating Junction Temperature | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |