ISZ072N06NM6ATMA1 vs IQE018N06NM6CGATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISZ072N06NM6ATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| Power Dissipation (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TTFN-9-3 (TOLL/TTFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | -55C to +175C (junction) |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET, OptiMOS 6 |
| RoHS Status | Compliant | — |
| MSL Level | 1 | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Tc) | — | 125 W |
| RoHS Compliance | — | Compliant |