ISZ072N06NM6ATMA1 vs IQE018N06NM6CGATMA1 Comparison
Detailed side-by-side comparison of ISZ072N06NM6ATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ072N06NM6ATMA1
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
ISZ072N06NM6ATMA1 β ActiveInfineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | ISZ072N06NM6ATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $1.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60V |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 57 A | β |
| Continuous Drain Current (ID, Ta) | 12.7 A | β |
| RDS(on) max @ VGS=10V | 7.2 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | β |
| Power Dissipation (Tc=25Β°C) | 50 W | β |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Package | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TTFN-9-3 (TOLL/TTFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C ( Tj max 175C ) | -55C to +175C (junction) |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET, OptiMOS 6 |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, Tc) | β | 178 A |
| Continuous Drain Current (I_D, Ta) | β | 25 A |
| R_DS(on) max (V_GS=10 V) | β | 1.8 mΞ© |
| Gate Threshold Voltage (V_GS(th)) | β | 3.3 V (logic-level compatible) |
| Power Dissipation (Tc) | β | 125 W |
| RoHS Compliance | β | Compliant |