ISZ15EP15LMATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of ISZ15EP15LMATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISZ15EP15LMATMA1
ISZ15EP15LMATMA1 - 150V P-Channel OptiMOS MOSFET | Infineon
ISZ15EP15LMATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | ISZ15EP15LMATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.28 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) max | -150 V | β |
| Drain-Source On-Resistance (RDS(on)) max | 1500 mOhm @ VGS = -10 V | β |
| Continuous Drain Current (ID) at TA=25C | 820 mA | β |
| Continuous Drain Current (ID) at TC=25C | 2.7 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Power Dissipation (PD) at TC=25C | 26.3 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Technology | OptiMOS trench-gate | OptiMOS 3 (trench MOSFET) |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) with exposed pad | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Packaging | Tape and Reel (T&R) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |