ISZ173N15NM6ATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of ISZ173N15NM6ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 βœ“ Active
Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter ISZ173N15NM6ATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $1.21
Manufacturer Infineon Technologies β€”
Series OptiMOS 6 150V β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at Ta 7.9 A β€”
Continuous Drain Current (ID) at Tc 48 A β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 94 W β€”
Technology OptiMOS 6 trench-gate MOSFET OptiMOS 5 (N-channel trench MOSFET)
Package PG-TSDSON-8 FL TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Mode Enhancement Mode β€”
Application Hard and soft switching, high/low frequency β€”
Lead-Free Yes β€”
RoHS Status Compliant Compliant
Tape & Reel Quantity 5000 β€”
Continuous Drain Current (ID, Tc=25C) β€” 161 A
Continuous Drain Current (ID, Ta=25C) β€” 28 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V β€” 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ β€” 1.7 V
Total Gate Charge Qg typ β€” 85 nC
Power Dissipation PD (Tc=25C) β€” 94 W
Operating Temperature Range β€” -55 C to +150 C
MSL Level β€” 1 (unlimited)
Lead-Free / Halogen-Free β€” Yes / Yes
Avalanche Rated β€” Yes

Datasheets & Resources

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