ISZ173N15NM6ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISZ173N15NM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISZ173N15NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 150V | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | β |
| Continuous Drain Current (ID) at Tc | 48 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 94 W | β |
| Technology | OptiMOS 6 trench-gate MOSFET | Trench MOSFET, silicon |
| Package | PG-TSDSON-8 FL | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | β |
| Application | Hard and soft switching, high/low frequency | β |
| Lead-Free | Yes | β |
| RoHS Status | Compliant | β |
| Tape & Reel Quantity | 5000 | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |