ISZ230N10NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 βœ“ Active
Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ230N10NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $3.62
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (Ta) 7.7 A β€”
Continuous Drain Current (Tc) 31 A β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 48 W β€”
On-Resistance RDS(on) at VGS=10V 23 mΞ© (typ, ID=10A) β€”
Gate Threshold Voltage VGS(th) 3.3 V (typ at 13 Β΅A) β€”
Technology OptiMOS 6 trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
Package PG-TSDSON-8 FL (3.3 x 3.3 mm) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C (junction) -55C to +175C (junction)
Gate Drive Voltage (recommended) 10 V β€”
MSL Level MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Family OptiMOS 6 (100V class) β€”
Drain-Source Voltage (Vds) β€” 120 V
Continuous Drain Current (Id) at Ta=25C β€” 19.2 A
Pulsed Drain Current (Idm) at Tc β€” 163 A
On-Resistance Rds(on) typ at Vgs=10V β€” 3.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 214 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg total]
Avalanche Energy Rated β€” Yes (single-pulse)

Datasheets & Resources

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