ISZ230N10NM6ATMA1 vs ISC037N12NM6ATMA1 Vergleich
Detaillierter Direktvergleich von ISZ230N10NM6ATMA1 von Infineon und ISC037N12NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | ISZ230N10NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $3,62 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (N-channel trench MOSFET) |
| Gehäuse | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TDSON-8 FL (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C (junction) | -55C to +175C (junction) |
| Gate Drive Voltage (recommended) | 10 V | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |