ISZ230N10NM6ATMA1 vs ISC037N12NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISZ230N10NM6ATMA1 dari Infineon dan ISC037N12NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISZ230N10NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 (N-channel trench MOSFET) |
| Paket | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TDSON-8 FL (SuperSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction) | -55C to +175C (junction) |
| Gate Drive Voltage (recommended) | 10 V | — |
| Level MSL | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |