K4A4G085WG-BCWE vs K4A4G045WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G085WG-BCWE by Samsung Electronics and K4A4G045WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WG-BCWE | K4A4G045WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.68 | $3.45 |
| Memory Type | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Memory Size | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Data Rate | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| Package | FBGA-78 (BCW) | TFBGA-78 (FBGA-78) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self refresh supported (per Partstack listing) |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gb |
| Organization | — | 1G x4 |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Number of Terminals | — | 78 |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| CAS Latency | — | [DATA_NEEDED: CL for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |