K4A4G085WG-BCWE vs K4A4G045WD-BCRC Vergleich
Detaillierter Direktvergleich von K4A4G085WG-BCWE von Samsung Electronics und K4A4G045WD-BCRC von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A4G085WG-BCWE | K4A4G045WD-BCRC |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,68 | $3,45 |
| Speichertyp | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Speichergröße | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Datenrate | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| Gehäuse | FBGA-78 (BCW) | TFBGA-78 (FBGA-78) |
| Montageart | Surface Mount | Surface Mount |
| Schnittstelle | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self refresh supported (per Partstack listing) |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gb |
| Speicherorganisation | — | 1G x4 |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Number of Terminals | — | 78 |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| CAS-Latenz | — | [DATA_NEEDED: CL for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |