K4A4G085WG-BCWE vs K4A4G045WD-BCRC 对比
详细并排对比 K4A4G085WG-BCWE 出自 Samsung Electronics 和 K4A4G045WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A4G085WG-BCWE | K4A4G045WD-BCRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.68 | $3.45 |
| 存储器类型 | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| 存储容量 | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| 数据速率 | 3200 Mbps/pin | — |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Technology | D-die DDR4 | — |
| 封装 | FBGA-78 (BCW) | TFBGA-78 (FBGA-78) |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | Self refresh supported (per Partstack listing) |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Density | — | 4 Gb |
| 存储组织 | — | 1G x4 |
| Die Generation | — | D-die |
| Supply Voltage VDD | — | 1.2 V |
| Speed Grade / Data Rate | — | BCRC (2400 Mbps per Samsung product selection guide) |
| Number of Terminals | — | 78 |
| Self Refresh | — | Yes |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Clock Frequency | — | [DATA_NEEDED: CK frequency for BCRC bin] |
| CAS 延迟 | — | [DATA_NEEDED: CL for BCRC bin] |
| Bank Architecture | — | DDR4 8 internal banks with bank groups |
| Lead Free Status | — | [DATA_NEEDED: lead-free status] |
| Packaging Option | — | [DATA_NEEDED: tape and reel quantity] |