K4A4G085WG-BCWE - 4Gb DDR4 3200Mbps SDRAM | Samsung
MPN: K4A4G085WG-BCWE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.95 | $3.95 |
| 10 | $3.62 | $36.20 |
| 100 | $3.28 | $328.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.68 | $2,680.00 |
Drop-in alternatives for K4A4G085WG-BCWE — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A4G085WF-BCWE
✅ Drop-In📋 Reference alternative (not in catalog)
K4A4G085WD-BCRC
✅ Drop-In✓ In Stock
$3.58 / Unit
View Datasheet →K4A4G085WD
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →MT40A512M8RH-075E:B
✅ Drop-In✓ In Stock
$2.15 / Unit
View Datasheet →K4A4G045WD-BCRC
✅ Drop-In✓ In Stock
$3.45 / Unit
View Datasheet →K4A4G085WG-BCWE Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM (Volatile) |
| Memory Size | 4 Gb |
| Memory Organization | 512M x 8 |
| Data Rate | 3200 Mbps/pin |
| Speed Class | DDR4-3200 |
| Supply Voltage (VDD) | 1.2 V |
| Technology | D-die DDR4 |
| Package | FBGA-78 (BCW) |
| Mounting Type | Surface Mount |
| Interface | Parallel (DDR4) |
| Burst Length | BL8 |
| DLL Mode | DLL Enabled (per datasheet timing) |
| RoHS Status | Compliant |
| Packaging | Tray |
K4A4G085WG-BCWE fbga-78 (bcw) Pin Configuration Guide
Complete pinout information for K4A4G085WG-BCWE (fbga-78 (bcw) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A4G085WG-BCWE.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G085WG-BCWE is suitable for 6 applications: Desktop and Embedded PC Main Memory, Networking Equipment Line-Card Memory, DDR4 UDIMM and RDIMM Module Manufacturing, Set-Top Box and Smart TV Platforms, Industrial Automation and HMI Systems, Gaming Consoles and Graphics Add-in Cards.
Desktop and Embedded PC Main Memory
The K4A4G085WG-BCWE's 4 Gb density and 512M x 8 organization make it a natural soldered-down main-memory device for desktop motherboards, industrial PCs, and embedded x86 platforms. Its DDR4-3200 data rate supports modern memory controllers, while the 1.2 V supply cuts memory-subsystem power roughly 25% versus DDR3 equivalents, reducing thermal load in fanless enclosures. Placed as individual components around the CPU in a fly-by or topology-matched x8 bus, the chip relies on controller training (write leveling, read gating) to hit 3200 Mbps. Designers should follow the datasheet's DLL-enabled timing parameters and keep trace-length skew within controller budgets for stable operation at full speed.
Recommended
Networking Equipment Line-Card Memory
Routers, switches, and network appliances use DDR4 x8 SDRAMs such as the K4A4G085WG-BCWE for packet buffers, routing tables, and control-plane memory. The 3200 Mbps/pin bandwidth supports high-throughput forwarding engines, and 4 Gb per device allows flexible density scaling across multiple packages on one 64-bit bus. The solder-down FBGA-78 package withstands vibration and thermal cycling in telecom racks better than socketed modules. Designers should implement ODT settings and address/command termination per the Samsung datasheet, and verify read/write margin under worst-case temperature because buffer traffic patterns create sustained thermal load that shifts DRAM timing.
Recommended
DDR4 UDIMM and RDIMM Module Manufacturing
Module houses building 8-bit-wide or x8-based UDIMMs/RDIMMs use the K4A4G085WG-BCWE as a commodity component: nine devices provide 4 GB with ECC, or eight devices provide 4 GB without ECC. Its 512M x 8 organization and FBGA-78 footprint match standard DDR4 module land patterns, and the DDR4-3200 bin supports mainstream PC4-25600 modules. Samsung's D-die process yields consistent training behavior across large volumes, important for automated module test. Producers should confirm all devices on a module share identical die revision and speed bin per the SPD data, since mixed bins degrade module performance to the slowest component's grade.
Recommended
Set-Top Box and Smart TV Platforms
Consumer set-top boxes and smart TVs employ DDR4 x8 SDRAMs for application memory alongside SoC integrated memory controllers. The K4A4G085WG-BCWE's 4 Gb capacity covers Linux-based middleware, channel buffering, and graphics frame buffers, while its 1.2 V operation supports ENERGY STAR-oriented power budgets. Soldered-down FBGA-78 mounting eliminates module sockets, lowering BOM cost for high-volume consumer builds. Designers should place the DRAM close to the SoC to keep fly-by stubs short at 3200 Mbps, apply series termination where the SoC reference design requires it, and validate memory training across the consumer temperature range and boot-cycle conditions.
Recommended
Industrial Automation and HMI Systems
Industrial controllers, HMIs, and edge gateways use the K4A4G085WG-BCWE for reliable soldered-down memory in environments with vibration, dust, and wide temperature swings where SO-DIMM sockets are unreliable. The 4 Gb 512M x 8 configuration supports real-time OS images, data logging buffers, and remote I/O tables, and DDR4-3200 headroom lets systems run at derated clocks with large timing margin. The 1.2 V rail simplifies integration with industrial point-of-load regulators. Apply conformal coating compatible with FBGA packages, follow the Samsung datasheet's power-up initialization sequence precisely, and extend controller refresh settings if operating near temperature limits.
Recommended
Gaming Consoles and Graphics Add-in Cards
Game consoles, arcade systems, and embedded graphics platforms use DDR4 x8 SDRAMs as shared system/framebuffer memory where GDDR is unnecessary. The K4A4G085WG-BCWE's 3200 Mbps/pin rate delivers 25.6 GB/s per 64-bit channel, adequate for 1080p-class rendering and texture streaming, while 4 Gb per device enables 4-8 GB configurations with moderate BOM cost. Multiple x8 devices populate both sides of a tight PCB, so designers must manage fly-by topology, on-die termination, and read-DBI settings per the Samsung datasheet. Thermal design matters: FBGA packages under sustained graphics load need copper pour or airflow to stay within datasheet temperature limits.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G085WG-BCWE — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G085WF-BCWE | K4A4G085WD-BCRC | MT40A512M8RH-075E:B | K4A4G045WD-BCRC |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 4 |
| Data Rate | 3200 Mbps | 3200 Mbps | 2666 Mbps | 2666-3200 Mbps class (-075E) | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | D-die (per datasheet) | F-die (earlier revision) | C-die (earlier generation) | [DATA_NEEDED] | C-die |
| Lifecycle Status | Active | [DATA_NEEDED] | Active (in distribution) | Active (in distribution) | [DATA_NEEDED] |
Key Differentiators
- Highest speed grade in the 4 Gb x8 family (vs K4A4G085WD-BCRC)
- Newer D-die process (vs K4A4G085WF-BCWE)
- x8 organization simplifies 64-bit buses (vs K4A4G045WD-BCRC)
Design Notes
DDR4 x8 layouts at 3200 Mbps require fly-by clock/address routing with per-byte-lane length matching for DQ/DM/DQS (typical skew budgets are on the order of a few ps per mil mismatch - follow your controller vendor's layout guide). Use solid VDD/VDDQ planes, at least one 0.1 uF ceramic capacitor per supply ball plus bulk capacitance per Samsung datasheet recommendations. Keep the K4A4G085WG-BCWE within 2-3 inches of the controller at full speed; longer traces need ODT and drive-strength tuning via mode registers.
DDR4 devices must follow the exact power-up initialization and mode-register programming sequence in the Samsung datasheet; skipping ZQ calibration (ZQCL) or improper MRS sequencing causes intermittent failures that appear only at temperature extremes. Also, controller memory training tables are die-revision specific - if you second-source to MT40A512M8RH-075E:B or K4A4G085WD-BCRC, regenerate SPD/training data and re-run full margin testing rather than assuming parameter interchange.
Estimated: at DDR4-3200 with typical activity, a 4 Gb x8 device draws roughly several hundred milliamps from the 1.2 V rail (exact ICC depends on the datasheet ICC curves and your access pattern). Budget the VDD rail with margin above worst-case ICC, place bulk capacitance near each device group, and verify VDD droop during simultaneous burst writes - transient droop below VDD minimum can corrupt in-flight data even if average current is well within budget.
Compliance Information
RoHS/lead-free status reflects standard Samsung DDR4 production. Explicit REACH, halogen-free, and conflict-minerals declarations were not present in the provided data - obtain compliance certificates directly from Samsung.
