K4A4G165WD-BCRC vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of K4A4G165WD-BCRC by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A4G165WD-BCRC K4A4G165WD-BCRC - 4Gb DDR4 SDRAM 2400MHz | Samsung

K4A4G165WD-BCRC - 4Gb DDR4 SDRAM 2400MHz | Samsung

K4A4G165WD-BCRC ✓ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

K4A8G165WB-BCRC ✓ Active

Specification Comparison

Parameter K4A4G165WD-BCRC K4A8G165WB-BCRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.10 $12.57
Memory Type DDR4 SDRAM DDR4 SDRAM (DRAM, volatile)
Density 4 Gbit —
Organization 256M x 16 —
Speed Bin DDR4-2400 (BCRC) —
Supply Voltage 1.2 V 1.2 V (1.14 V to 1.26 V)
Package FBGA-96 96-ball FBGA (PBGA96)
Mounting Type Surface Mount Surface Mount
Process Generation Samsung D-die —
Interface Type DDR4 (double data rate, parallel) —
On-Die Termination (ODT) Yes —
Data Mask Function Yes —
Auto Precharge Yes Yes
CRC Function Yes —
ZQ Calibration Yes Yes
Operating Temperature [DATA_NEEDED: operating temperature range] -40C to +95C
RoHS Status Lead free / RoHS Compliant Compliant
Package Dimensions [DATA_NEEDED: package dimensions] —
Memory Size — 8 Gb (1 GB)
Memory Organization — 512M x 16
Data Rate — 2400 Mbps (PC4-19200)
Technology — CMOS DRAM, Samsung 8Gb B-die
Ball Pitch — 0.8 mm
Interface — DDR4 (Double Data Rate, synchronous)
On-Die Termination — Yes (ODT with dynamic ODT)
CRC / CA Parity — Yes (CRC function)
Asynchronous Reset — Yes
Refresh — Auto-refresh and self-refresh

Datasheets & Resources

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