K4A4G165WE-BCTD vs K4A4G165WF-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WE-BCTD by Samsung Electronics and K4A4G165WF-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ Active
Specification Comparison
| Parameter | K4A4G165WE-BCTD | K4A4G165WF-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.38 | $8.20 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| Interface | Parallel, x16 | SSTL-12 |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) | — |
| Die Generation | E-die | — |
| Package | FBGA-96 (TFBGA) | FBGA-96 (PBGA96) |
| Terminal Count | 96 | — |
| Operating Temperature | 0C to +85C | 0C to +95C |
| Mounting Type | Surface Mount | Surface Mount |
| Speed Grade | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant |
| Product Status | Active | — |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 | — |
| Burst Length | BL8 (JEDEC DDR4) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Organization | — | 256M x 16 |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |