K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
MPN: K4A4G165WE-BCTD ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $11.38 | $11.38 |
| 10 | $11.38 | $113.80 |
| 100 | $22.47 | $2,247.00 |
| 500 | $22.47 | $11,235.00 |
| 1,000 | $22.47 | $22,470.00 |
Drop-in alternatives for K4A4G165WE-BCTD — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K4A4G165WF-BCTD
✅ Drop-In✓ In Stock
$2.69 / Unit
View Datasheet →K4A4G165WG-BCWE
✅ Drop-In✓ In Stock
$16.9 / Unit
View Datasheet →K4A4G165WF-BCWE
✅ Drop-In✓ In Stock
$10.65 / Unit
View Datasheet →K4A4G085WE-BCTD
✅ Drop-In📋 Reference alternative (not in catalog)
K4AAG165WC-BCWE
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A256M16GE-075E:B
✅ Drop-In✓ In Stock
$3.95 / Unit
View Datasheet →K4A4G165WE-BCTD Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM (volatile DRAM) |
| Memory Size | 4 Gbit |
| Memory Organization | 256M x 16 |
| Interface | Parallel, x16 |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | E-die |
| Package | FBGA-96 (TFBGA) |
| Terminal Count | 96 |
| Operating Temperature | 0C to +85C |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (per JLCPCB listing) |
| Product Status | Active |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | BL8 (JEDEC DDR4) |
| Bank Group Architecture | Yes (DDR4) |
K4A4G165WE-BCTD fbga-96 (tfbga) Pin Configuration Guide
Complete pinout information for K4A4G165WE-BCTD (fbga-96 (tfbga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4A4G165WE-BCTD.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A4G165WE-BCTD is suitable for 6 applications: Embedded Industrial Controllers, FPGA Co-processing and Prototyping Boards, Network Appliance Main Memory, Set-Top Boxes and Smart TV Platforms, Gaming and Graphics Buffer Memory, Test and Measurement Instrument Memory.
Embedded Industrial Controllers
The K4A4G165WE-BCTD's 4Gb density and 256M x 16 organization make it a natural main-memory choice for embedded industrial controllers running Linux or RTOS stacks. Its 0C to +85C operating range covers standard industrial enclosures, and the 1.2V DDR4 rail integrates cleanly with industrial PMICs such as the TI TPS54218 family. The x16 bus halves trace count versus two x8 devices in a 32-bit configuration, easing four-to-six layer PCB routing around dense connector fields. Placed on a fly-by or short stub topology with on-die termination (ODT) enabled per JEDEC DDR4 practice, it delivers reliable operation with standard controller training routines. For BOM resilience, the Micron MT40A256M16GE-075E:B offers a pin-compatible second source.
Recommended
FPGA Co-processing and Prototyping Boards
FPGA designs frequently use x16 DDR4 because FPGA memory-controller hard blocks or soft PHYs (e.g., Xilinx MIG, Intel EMIF) support 16-bit DDR4 interfaces with straightforward pin planning. The K4A4G165WE-BCTD's FBGA-96 footprint aligns with common FPGA board layouts, and 4Gb (256MB) capacity suits video frame buffers, DSP coefficient stores, and packet buffering. Designers should match the Samsung -BCTD speed bin to the FPGA PHY's supported data rate during MIG configuration and verify ZQ calibration resistor placement (RZQ 240 ohm) per the Samsung datasheet. Signal integrity benefits from length-matched DQS/DQ groups and solid 1.2V/2.5V VPP planes. K4A4G165WG-BCWE can be substituted for higher-bandwidth builds.
Recommended
Network Appliance Main Memory
Enterprise and edge networking platforms (switches, routers, firewalls) rely on DDR4 for control-plane memory, packet-buffer management, and CPU companion DRAM. The K4A4G165WE-BCTD fits networking SoC designs whose memory controllers expose 16-bit channels, and multiple chips can be ganged into 32-bit or 64-bit configurations on a shared command bus. DDR4's bank-group architecture improves random-access efficiency for table lookups compared with DDR3. At 1.2V, per-chip power is substantially lower than 1.5V DDR3 equivalents, reducing thermal load in fanless network hardware operating to +85C. The E-die generation is broadly qualified across networking silicon vendor support lists, simplifying platform certification.
Recommended
Set-Top Boxes and Smart TV Platforms
Cost-optimized consumer AV platforms such as IPTV set-top boxes and smart TV SoCs commonly pair single or dual x16 DDR4 chips with the main SoC. The K4A4G165WE-BCTD's 4Gb capacity (512 MB) supports HD/4K streaming stacks with middleware, and its x16 organization matches the 16-bit or 32-bit DDR4 PHYs prevalent in consumer SoCs. The FBGA-96 package keeps the memory footprint under 15 x 10 mm class, fitting compact main boards. Because these platforms are cost-sensitive, the E-die part's mainstream pricing is an advantage, and the pin-compatible K4A4G165WF generation provides a drop-in migration path when speed headroom or supply continuity is needed. RoHS compliance supports global consumer certification.
Recommended
Gaming and Graphics Buffer Memory
Entry-level gaming peripherals, arcade systems, and display-buffers use x16 DDR4 as texture and framebuffer memory attached to SoCs or GPU-companion chips. The K4A4G165WE-BCTD's BL8 burst and bank-group architecture deliver the sequential bandwidth needed for double-buffered video output, while 256MB capacity handles 1080p frame stores with compositing layers. Designers should size the 1.2V VDD rail for burst current and place one bulk capacitor per chip plus 0.1uF ceramics at each VDD ball cluster per Samsung layout guidance. For platforms needing more bandwidth, the same-footprint K4A4G165WG-BCWE (3200 Mbps class) upgrades performance without PCB respin - a practical mid-lifecycle performance bump.
Recommended
Test and Measurement Instrument Memory
Bench instruments such as logic analyzers, data loggers, and signal generators use DDR4 to buffer capture data and run embedded UI stacks. The K4A4G165WE-BCTD's industrial temperature rating and standard JEDEC interface integrate with instrument SoCs and FPGAs, while the x16 bus simplifies routing on dense multi-layer instrument boards. Capture pipelines benefit from DDR4's improved bank parallelism for sustained write streams. Long product lifecycles matter in instrumentation: the availability of pin-compatible Samsung W/F generations and the Micron MT40A256M16GE-075E:B second source protects multi-year production programs against allocation cycles. Verify controller speed-bin support and thermal budget (VDD 1.14V-1.26V window) during design review.
Recommended
Recommended Products Summary
Engineering reference data for K4A4G165WE-BCTD — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A4G165WF-BCTD | K4A4G165WG-BCWE | MT40A256M16GE-075E:B | ||
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | ||
| Package | FBGA-96 (TFBGA) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 8 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 8 | 1G x 16 | 256M x 16 |
| Supply Voltage | 1.2 V (1.14 V - 1.26 V) | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Die Generation | E-die | F-die (newer) | G-die (newer) | E-die | C-die | [DATA_NEEDED] |
| Operating Temperature | 0C to +85C | 0C to +85C | [DATA_NEEDED] | 0C to +85C | [DATA_NEEDED] | 0C to +85C |
| Reference Price (USD, qty 1) | 11.38 (as of 2026-09-04) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Cost-optimized E-die generation (vs K4A4G165WG-BCWE)
- x16 organization halves trace count (vs K4A4G085WE-BCTD)
- Drop-in migration path within one footprint (vs K4A4G165WF-BCTD)
Design Notes
The K4A4G165WE-BCTD requires a 1.2V VDD rail held within 1.14V-1.26V plus the DDR4 VPP 2.5V rail. Estimated: at typical DDR4 x16 idle-to-active current of several hundred milliamps per chip, budget the regulator for peak burst current with at least 10uF bulk capacitance per device plus 0.1uF ceramics at each VDD ball cluster. Power-rail sequencing and power-ramp per JEDEC DDR4 initialization in the Samsung K4A4G165WE datasheet (Rev. 1.4) must be followed or controller training may fail.
Route DQ/DQS/DM as length-matched groups; for single-chip x16 designs a short-point-to-point topology with ODT enabled usually avoids fly-by complexity. Keep CK/CK# pair tightly coupled with 100-ohm differential routing practice. Place the 240-ohm RZQ calibration resistor close to the ZQ ball with a dedicated low-impedance ground return. The FBGA-96 footprint files from LCSC (part C2920055) can seed the land pattern; verify via-in-pad rules against your fab capability.
Do not assume pin compatibility between x8 and x16 DDR4 variants: the K4A4G085WE-BCTD shares the FBGA-96 package but its ball map and controller configuration differ from the x16 K4A4G165WE-BCTD. Also confirm the memory controller's qualified vendor list and supported speed bins before swapping dies generations (E-die to F/G-die); update firmware training tables and timing parameters accordingly. DDR3 parts with similar ball counts are NOT substitutes - DDR4 signaling and initialization are incompatible.
Compliance Information
RoHS compliant per JLCPCB listing (part C2920055). REACH, halogen-free, and conflict-minerals declarations not found in provided data - request Samsung environmental compliance documents for the specific date code.
