K4A4G165WF-BCTD vs K4A4G165WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G165WF-BCTD by Samsung Electronics and K4A4G165WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WF-BCTD | K4A4G165WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.20 | $5.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Interface | SSTL-12 | — |
| Package | FBGA-96 (PBGA96) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | — |
| RoHS Status | Compliant | Lead free / RoHS Compliant |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Supply Voltage | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| Interface Type | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |