K4A4G165WF-BCTD vs K4A4G165WD-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G165WF-BCTD disebabkan oleh Samsung Electronics dan K4A4G165WD-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G165WF-BCTD | K4A4G165WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $8.20 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Antaramuka | SSTL-12 | — |
| Kemasan | FBGA-96 (PBGA96) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | — |
| Status RoHS | Compliant | Lead free / RoHS Compliant |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Tegangan Pemberi Arus | — | 1.2 V |
| Process Generation | — | Samsung D-die |
| Jenis Antaramuka | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |