K4A4G165WF-BCTD vs K4A4G165WD-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WF-BCTD by Samsung Electronics and K4A4G165WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WF-BCTD | K4A4G165WD-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.20 | $19.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Speed (Data Rate) | 2666 Mbps (DDR4-2666) | — |
| Supply Voltage VDD | 1.2 V (1.14 V to 1.26 V) | — |
| I/O Voltage VDDQ | 1.2 V | — |
| Interface | SSTL-12 | SSTL-12 |
| Package | FBGA-96 (PBGA96) | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Operating Temperature | 0C to +95C | 0C to +85C (commercial) |
| Features | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Technology | Samsung F-die CMOS | — |
| Bank Groups | 4 (x16 configuration) | — |
| Refresh | Self-refresh and auto-refresh supported | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 4 Gbit |
| Data Rate | — | 2666 Mbps/pin (-BCTD speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes (external RZQ resistor) |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |