K4A4G165WG-BCWE vs MT40A512M16JY-083E Comparison

Detailed side-by-side comparison of K4A4G165WG-BCWE by Samsung Electronics and MT40A512M16JY-083E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A4G165WG-BCWE K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4A4G165WG-BCWE ✓ Active
Micron Technology
MT40A512M16JY-083E MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E ✓ Active

Specification Comparison

Parameter K4A4G165WG-BCWE MT40A512M16JY-083E
Brand Samsung Electronics Micron Technology
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $16.90 $5.85
Memory Type DDR4 SDRAM (volatile DRAM) DDR4 SDRAM (Automotive)
Memory Size 4 Gbit —
Memory Organization 256M x 16 —
Interface Parallel —
Data Rate 3200 Mbps 2400 MT/s (speed grade -083E)
Access Time 19 ns —
Supply Voltage 1.2 V —
Operating Temperature 0C to +85C —
Package FBGA-96 96-FBGA (8 x 14 mm)
Mounting Type Surface Mount Surface Mount
Memory Format DRAM —
Technology DDR4 —
Product Status Active —
RoHS Status Compliant (per JLCPCB listing) —
Clock Frequency [DATA_NEEDED: clock frequency / tCK range] 1.2 GHz (tCK = 0.83 ns)
CAS Latency [DATA_NEEDED: CAS latency] —
Refresh Rate [DATA_NEEDED: refresh interval] —
Density — 8 Gbit
Organization — 512M x 16
VDD Supply Voltage — 1.2 V +/- 60 mV
VDDQ Supply Voltage — 1.2 V +/- 60 mV
VPP Supply Voltage — 2.5 V, -125 mV, +250 mV
I/O Interface — 1.2 V pseudo open-drain
VREFDQ — On-die internal adjustable generation
Refresh Structure — 8192-cycle refresh
Refresh Window — 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C
ECCN — EAR99
Halogen Free — Compliant
Country of Origin — China

Datasheets & Resources

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